CoTiO₃ high-κ dielectrics on HSG for DRAM applications
Tien-Sheng Chao; Wei-Ming Ku; Hong-Chin Lin; Landheer, D.; Yu-Yang Wang; Mori, Y.
Electron Devices, IEEE Transactions on
Volume 51, Issue 12, Dec. 2004 Page(s): 2200 - 2204
Digital Object Identifier   10.1109/TED.2004.839880
Summary:In this paper, a new high-κ dielectric CoTiO₃ has been investigated for the first time on hemispherical grained (HSG) poly-Si dynamic random access memories capacitors. Three types of HSG were prepared. We found that capacitors with maximum grain size and the highest density exhibit twice the capacitance of the others. The dielectric constant for CoTiO₃ was estimated to be larger than 50. Leakage current measurements performed at temperatures as high as 100°C show that this dielectric is stable. The polarity dependence is found to be due to the different barrier heights with the nitride barrier. A leakage mechanism is proposed for this polarity dependence.

» View citation and abstract

Log in by entering your IEEE Web Account Username and Password.

IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.

• Search and access Abstract records free of charge
• Register for table of contents alerts
• Purchase Full Text PDF documents

» Learn more about subscription options or how to become an IEEE Member.