Requirements for low intermodulation distortion in GaN-Al_xGa_1-xN high electron mobility transistors: a modelassessment
Tao Li; Joshi, R.P.; del Rosario, R.D.
Electron Devices, IEEE Transactions on
Volume 49, Issue 9, Sep 2002 Page(s): 1511 - 1518
Digital Object Identifier   10.1109/TED.2002.802626
Summary:A model analysis of the large-signal characteristics of GaN-Al_xGa_1-xN high-electron mobility transistors (HEMTs) with particular emphasis on intermodulation distortion (IMD) and the third-order intercept point. Since the nonlinearity depends critically on the carrier transport behavior, a Monte Carlo (MC) based numerical simulation scheme has been employed. The focus is to identify parameters and their interdependencies with a view of setting optimal limits for enhanced microwave performance. A case is made for increased mole fraction for the barrier layer, reducing the transit length, and introducing a thin AlN interfacial layer for suppressing real space transfer for enhancing the device performance. Finally, high-temperature predictions of the nonlinear behavior and IMD have been made, by carrying out the MC simulations at 600 K. In a process a favorable case is made for the GaN system as a potential candidate for microwave and RF applications at elevated temperatures

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