Etch rates for micromachining processing
Williams, K.R.; Muller, R.S.
Microelectromechanical Systems, Journal of
Volume 5, Issue 4, Dec 1996 Page(s):256 - 269
Digital Object Identifier   10.1109/84.546406
Summary:The etch rates for 317 combinations of 16 materials (single-crystal silicon, doped, and undoped polysilicon, several types of silicon dioxide, stoichiometric and silicon-rich silicon nitride, aluminum, tungsten, titanium, Ti/W alloy, and two brands of positive photoresist) used in the fabrication of microelectromechanical systems and integrated circuits in 28 wet, plasma, and plasmaless-gas-phase etches (several HF solutions, H₃PO₄, HNO₃ +H₂O+NH₄F, KOH, Type A aluminum etchant, H ₂O+H₂O₂+HF, H₂O₂, piranha, acetone, HF vapor, XeF₂, and various combinations of SF₆, CF₄, CHF₃, Cl₂, O₂ , N₂, and He in plasmas) were measured and are tabulated. Etch preparation, use, and chemical reactions (from the technical literature) are given. Sample preparation and MEMS applications are described for the materials

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