Proximity effect and hot-electron diffusion in Ag/Al₂O₃/Al tunnel junctions
Netel, H.; Jochum, J.; Labov, S.E.; Mears, C.A.; Frank, M.; Chow, D.; Lindeman, M.A.; Hiller, L.J.
Applied Superconductivity, IEEE Transactions on
Volume 7, Issue 2, Jun 1997 Page(s):3379 - 3382
Digital Object Identifier   10.1109/77.622099
Summary:We have fabricated Ag/Al₂O₃/Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition, these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z, ultra-pure superconducting crystals

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