Polysilicon thin film transistors fabricated at 100°C on aflexible plastic substrate
Theiss, S.D.; Carey, P.G.; Smith, P.M.; Wickboldt, P.; Sigmon, T.W.; Tung, Y.J.; King, T.-J.
Electron Devices Meeting, 1998. IEDM apos;98 Technical Digest., International
Volume , Issue , 6-9 Dec 1998 Page(s):257 - 260
Digital Object Identifier   10.1109/IEDM.1998.746349
Summary:We present device results from polysilicon thin film transistors (TFTs) fabricated at a maximum temperature of 100°C on plastic (PET) substrates. A XeCl excimer laser has been used both to crystallize sputtered a-Si and to heavily dope the TFT source/drain regions. Using a PECVD SiO₂ layer for the gate dielectric, and a post-fabrication anneal at 150°C, we have succeeded in fabricating TFTs with I_ON/I_OFF ratios >5×10⁵ and electron mobilities >60 cm²/V-s on polyester substrates

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