Extremely-large p-i(MQW)-n modulator diodes to examine intrinsicdevice yield
Goossen, K.W.; Leibenguth, R.
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS apos;97 10th Annual Meeting. Conference Proceedings., IEEE
Volume 1, Issue , 10-13 Nov 1997 Page(s):283 - 284 vol.1
Digital Object Identifier   10.1109/LEOS.1997.630626
Summary:Summary form only given. We present data designed to show material defect levels pertinent to p-i-n MQW modulators. We do this by forming extremely-large modulators with 5x5 mm active areas. We then measure the reverse leakage current. Our wafer was grown by MBE on a semi-insulating substrate

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