Microscopic photoluminescence spectroscopy of self-organizedCdSe-ZnSe quantum dots grown on the GaAs (110) cleaved surface
Hyun-Chul Ko; Doo-Cheol Park; Kawakami, Y.; Fujita, S.
Selected Topics in Quantum Electronics, IEEE Journal of
Volume 3, Issue 3, Jun 1997 Page(s):831 - 835
Digital Object Identifier 10.1109/2944.640636
Summary:Self-organized CdSe-ZnSe quantum dots (QDs) were fabricated on the
cleavage-induced GaAs (110) surface in ultra high vacuum (UHV) by
molecular beam epitaxy (MBE). CdSe layer showed the Stranski-Krastanow
(S-K) growth mode, QWs and QDs emissions originated from the wetting
layer and island structures, respectively, were observed in
photoluminescence (PL) spectra. This is a evidence of S-K type where
island structures are self-formed on the two-dimensional wetting layer
as a result of the transition of the growth mode. The state filling
effect in the QDs was also observed by employing excitation power
dependence on the PL intensity. By using the microscopic PL
spectroscopy, the broad PL peak of QDs was resolved into a number of
sharp peaks. These peaks are attributed to the recombination of excitons
localized at the individual QDs indicating that the fabricated CdSe
islands have quasi-zero-dimensional δ-function like density of
states
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