IC reliability simulation
Hu, C.
Solid-State Circuits, IEEE Journal of
Volume 27, Issue 3, Mar 1992 Page(s):241 - 246
Digital Object Identifier   10.1109/4.121544
Summary:The motivation and challenges of IC reliability simulation are discussed. The reliability simulator BERT is used to illustrate the physical models and approaches used to simulate the hot-electron effect, oxide time-dependent breakdown, electromigration, and bipolar transistor gain degradation

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