High-speed optoelectronic VLSI switching chip with >4000 opticalI/O based on flip-chip bonding of MQW modulators and detectors tosilicon CMOS
Lentine, A.L.; Goossen, K.W.; Walker, J.A.; Chirovsky, L.M.F.; Dapos;Asaro, L.A.; Hui, S.P.; Tseng, B.J.; Leibenguth, R.E.; Cunningham, J.E.; Jan, W.Y.; Kuo, J.-M.; Dahringer, D.W.; Kossives, D.P.; Bacon, D.D.; Livescu, G.; Morrison, R.L.; Novotny, R.A.; Buchholz, D.B.
Selected Topics in Quantum Electronics, IEEE Journal of
Volume 2, Issue 1, Apr 1996 Page(s):77 - 84
Digital Object Identifier 10.1109/2944.541876
Summary:We present the first high-speed optoelectronic very large scale
integrated circuit (VLSI) switching chip using III-V optical modulators
and detectors flip-chip bonded to silicon CMOS. The circuit, which
consists of an array of 16×1 switching nodes, has 4096 optical
detectors and 256 optical modulators and over 140K transistors. All but
two of the 4352 multiple-quantum-well diodes generate photocurrent in
response to light. Switching nodes have been tested at data rates above
400 Mb/s per channel, the delay variation across the chip is less than
±400 ps, and crosstalk from neighboring nodes is more than 45 dB
below the desired signal. This circuit demonstrates the ability of this
hybrid device technology to provide large numbers of high-speed optical
I/O with complex electrical circuitry
View citation and abstract |
Cart
