A superconducting resonant tunneling transistor with insulatingbase layer
Tamura, H.; Yoshida, A.; Gotoh, K.; Hasuo, S.; Van Duzer, T.
Magnetics, IEEE Transactions on
Volume 27, Issue 2, Mar 1991 Page(s):2594 - 2597
Digital Object Identifier 10.1109/20.133746
Summary:A superconducting transistor that uses resonant tunneling as the
carrier transport mechanism is proposed. Carriers travel between two
superconducting electrodes by resonant tunneling via impurity levels in
a barrier. The barrier is a high-dielectric-constant insulator layer
sandwiched between low-dielectric-constant layers. The
high-dielectric-constant layer conducts an electric field, and the
electric potential in the barrier is controlled by voltage applied to
the base electrode connected to the edge of the high-dielectric-constant
layer. The coupling coefficient between the base and levels may be more
than 90% on the average when the emitter stripe width is about 0.1 μm
and the relative dielectric constant of the high-dielectric-constant
layer is on the order of 104. The current-versus-voltage
characteristics of the transistor were calculated using a tunnel
Hamiltonian approximation. The transistor's calculated transconductance
was 6×106 S/cm2 at a current density of
3×104 A/cm2 when the lifetime broadening of
resonant levels was 4 meV and the level density was 1011 cm
-2
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