Ionizing radiation effects in EPF10K50E and XC2S150 programmable logic devices

We have measured the effects of total ionizing dose in Altera FLEX 10K50E embedded programmable logic devices and Xilinx Spartan-II 150 field program gate arrays. The devices were irradiated with X-rays at a dose rate of about 12 cGy(SiO/sub 2/)/s. An average total dose of 830 Gy(SiO/sub 2/) was absorbed by the FLEX 10KE and 330 Gy(SiO/sub 2/) by the Spartan-II before the power supply current increased.