An exponential model of channel-length modulation applied towards floating-gate circuits

Modeling of the drain current-voltage relationship often is the primary effect that limits the performance of floating-gate circuits. In this paper, we propose and discuss a model of drain-voltage effects (such as channel-length modulation) on channel current based upon a novel use of an exponential dependence of drain voltage. This exponential formulation cleanly models the MOSFET behavior throughout the spectrum of long and short channel devices. This exponential formulation also simplifies the solution of basic amplifier circuits, and gives some surprising results of the linearity of two-transistor amplifiers. This exponential formulation is consistent with the effects seen due to floating-gate to drain capacitance in floating-gate circuits.