Highly Scalable Embedded Flash Memory With Deep Trench Isolation and Novel Buried Bitline Integration for the 90-nm Node and Beyond

In this paper, we embedded a Flash memory cell with 90-nm ground-rules in a high-performance CMOS logic process. A novel deep trench isolation (DTI) module enables an isolated p-well (IPW) bias scheme, leading to Flash with uniform channel program/erase by Fowler-Nordheim tunneling without gate induced drain leakage, a key feature for low-power portable electronics. The IPW concept leads to a compact cell design and a highly scalable high-voltage periphery through the narrow intrawell and interwell isolation spaces. The memory arrays are defined by DTI of each bitline (BL) from its neighboring BLs. We additionally present a buried BL (BBL) concept that links the source contacts of each individual BL via the IPW; thus, effectively eliminating one metal line per BL and reducing overall cell size. A conservative cell size shrink of about 40% can be achieved for a uniform channel program/erase-Flash cell with deep trench and BBL compared to a conventional 21F
²
cell.