New Method For Estimation Of The Grain Boundaries Contribution To The Resistance Of Highly Doped Polysilicon

Thin films of polycrystalline silicon have found wide range of applications in microelectronics. Although this material has been extensively investigated the experimental information related to the electrical properties of microscopic inter-grain regions, grain boundaries, remains not sufficient especially for the case of high doping levels [1,2]. The majority of existing models for resistivity of grain boundaries are hardly valid for high doping levels.