The InSb on a piezoelectric Rayleigh wave amplifier

Results taken from monolithic acoustic surface-wave amplifiers which employ the interaction between carriers drifting in a semiconductor film and electric fields accompanying a Rayleigh wave propagating on a piezoelectric substrate are described. The experimental devices were fabricated in vacuum by flash evaporation of a InSb compound onto heated substrates of LiNbO
3
or Bi
12
GeO
20
. Theoretical and experimental amplifier results are presented for several different pulsed operating monolithic devices. The results include measurements of electronic and terminal gain, saturation power, and noise figure as a function of bias voltage, and gain and phase dispersion as a function of frequency. Results are also given for a two film device which uses field effect to alter the conductivity of the amplifier film. Results from continuously operating samples fabricated by etching the semiconductor to a strip 25 µm in width are summarized.