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Position monolithic silicon detector telescope: simulation results Bottiglieri, G.; Amorini, F.; Cardella, G.; Di Pietro, A.; Fallica, P.G.; Figuera, P.; Liotta, S.F.; Morea, A.; Musumarra, A.; Papa, M.; Rizzo, F.; Tudisco, S.; Valvo, G. Instrumentation and Measurement Technology Conference, 2004. IMTC 04. Proceedings of the 21st IEEE Volume 3, Issue , 18-20 May 2004 Page(s): 1811 - 1816 Vol.3 Digital Object Identifier 10.1109/IMTC.2004.1351435 Summary:The collaboration between ST Microelectronics, INFN LNS and Catania University gave birth to the design of a monolithic silicon ΔE-E detector telescope in the last years. Using ion implantation techniques, the ΔE stage of that telescope was integrated on the same silicon E detector and an ultra thin ΔE stage (≈ 1 μm thick) with an excellent charge resolution for low energy (less than 5 MeV) ions was obtained. The positive experience, we got from that already developed silicon monolithic ΔE-E telescope, encouraged its to work on a new generation detector. Our aim is to develop a large area "multidetector" device able to give not only a good charge resolution for low energy ions but also position information. The feasibility of this kind of detector has been verified by 2D simulations carried out by DESSIS ISE^(*) device simulator. » View citation and abstract



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