IEEE Xplore - Login

Cart | Sitemap | Help

Login


	BROWSE	SEARCH	IEEE XPLORE GUIDE	SUPPORT


Article Information

Extracting Contact Effects in Organic FETs Hamadani, B.H.; Natelson, D. Proceedings of the IEEE Volume 93, Issue 7, July 2005 Page(s):1306 - 1311 Digital Object Identifier 10.1109/JPROC.2005.850301 Summary:Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic FETs (OFETs). These effects are more prevalent in short channel length devices and therefore should not be ignored when examining intrinsic properties such as the mobility and its dependence on temperature or gate voltage. Here we outline a general procedure to extract contact current-voltage characteristics and the true channel mobility from the transport characteristics in bottom-contact poly (3-hexylthiophene) FETs, for both ohmic and nonlinear charge injection, over a broad range of temperatures and gate voltages. Distinguishing between the contact and channel contributions in bottom-contact OFETs is an important step toward improved understanding and modeling of these devices. » View citation and abstract



IEEE Members

Log in by entering your IEEE Web Account Username and Password. IEEE Communications Society members: If you subscribe to the IEEE Electronic Periodicals Package or IEEE Electronic Periodicals Package Plus, you must access your subscription at www.comsoc.org.



Users at Subscribing Institutions

Check with your librarian, information professional, or system manager to determine if you need to log in. Please complete the online Technical Support Form if you need assistance.



Already Purchased This Article?

Select the Purchase History link to access the document. You will have 5 Days after purchase to access the Full Text PDF. Please complete the online Technical Support Form if you need assistance.



Guests

• Search and access Abstract records free of charge • Register for table of contents alerts • Purchase Full Text PDF documents » Learn more about subscription options or how to become an IEEE Member.

You are not logged in.

Username

Password

» Forgot your password?

Please remember to log out when you have finished your session.

You must log in to access:
• Advanced or Author Search
• CrossRef Search
• AbstractPlus Records
• Full Text PDF
• Full Text HTML

Access this document

» Buy this document now

» Learn more about

subscription options

» Learn more about

purchasing articles

and standards

Learn more about IEEE Subscriptions

Help Contact Us Privacy & Security IEEE.org